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The process can be outlined by 5 basic steps, which is then repeated thousands of times to produce a film of almost any material desired. • Pulse reactive or inert gas into source chamber • Pulsed laser ablates target material creating a high temperature plasma of the target material • High Temperature plasma reacts with gas (in the case of inert gas, no reaction occurs) to form stoichiometric metal oxide or metal nitride clusters • Adiabatic expansion of reacted or unreacted molecular clusters through a nozzle from source chamber to deposition chamber to create a molecular beam. • Adsorption of cooled (through adiabatic expansion) molecular clusters onto receiving substrate that can be rotating and heated up to 950°C. |
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Customer Driven Equipment, Materials and Device Solutions |
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201 Circle Drive North, Suite 102 Piscataway, New Jersey 08854 P: 732-469-1591 F: 732-469-1592 sales1@ambptech.com |
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Laser Assisted Molecular Beam Depostion (LAMBD) The LAMBD technology is the marriage of Pulsed Laser Deposition and Molecular Beam Epitaxy which is schematically shown below.
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Typical monolayer/pulse deposition rates obtained at AMBP Tech for low defect density HfO2 are 0.2ML/pulse. Given this rate, the vacuum pumps and lasers that are commercially available that would enable 100 pulses per second, a deposition rate of 20um/hour is very possible. Currently, 3” wafers can be deposited upon. Contact us to discuss your application!! |