Ion Implant Activation

Sub-75nm node technology requires shallow junctions with abrupt profiles.  Activation of low energy implants with shallow junction profiles requires the use of excimer laser annealing technology.

AMBP Tech has developed a single wafer laser annealing system that activates the dopants with retention of the original implanted profile after annealing.  AMBP Tech will either provide ion implant activation services or provide the turnkey Laser Anneal 6300 system that is an economical solution to breaking the sub-75nm technology node barrier.